Measurement of strong photon recycling in ultra-thin GaAs n/p junctions monolithically integrated in high-photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60%-Reference-Cited by-同舟云学术

Measurement of strong photon recycling in ultra-thin GaAs n/p junctions monolithically integrated in high-photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60%

Published:2016-12-16 Issue:2 Volume:11 Page:1600385
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Proulx F.¹²,York M. C. A.¹,Provost P. O.¹²,Arès R.¹,Aimez V.¹,Masson D. P.²,Fafard S.¹²

Affiliation:

1. Laboratoire Nanotechnologies Nanosystèmes (LN2), CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke; Sherbrooke J1K OA5, QC Canada

2. Azastra Opto Inc.; Ottawa, Ontario K1W 1G3 Canada

Funder

Ministère de l'Économie, de l'Innovation et des Exportations

Industrial Research Assistance Program from the National Research Council of Canada

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference39 articles.

1. Boosting Solar Cell Photovoltage via Nanophotonic Engineering

2. Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic GaAs n/p junctions

3. Ultrathin GaAs Solar Cells With a Silver Back Mirror