High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%-Reference-Cited by-同舟云学术

High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%

Published:2016-09-26 Issue:13 Volume:109 Page:131107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fafard S.¹²,Proulx F.¹²,York M. C. A.¹,Richard L. S.¹,Provost P. O.¹²^ORCID,Arès R.¹^ORCID,Aimez V.¹,Masson D. P.²

Affiliation:

1. Laboratoire Nanotechnologies Nanosystèmes (LN2)—CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Quebec J1K OA5, Canada

2. Azastra Opto Inc., Ottawa, Ontario K1W 1G3, Canada

Funder

Azastra Inc

Industrial Research Assistance Program (IRAP)

Ministere de l'economie, de l'innovation et des exportations du Quebec

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4964120

Reference30 articles.

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3. Strong Internal and External Luminescence as Solar Cells Approach the Shockley–Queisser Limit

4. Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

5. Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic GaAs n/p junctions

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