Polarization threshold switches based on ordered GaInP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120304
Reference14 articles.
1. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
2. Photoluminescence and excitation-photoluminescence study of spontaneous ordering inGaInP2
3. Band‐gap narrowing in ordered and disordered semiconductor alloys
4. Polarized band-edge photoluminescence and ordering inGa0.52In0.48P
5. Band‐gap reduction and valence‐band splitting of ordered GaInP2
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1. Laser assisted electrochemical preparation of micro and nanopores in Ga x In1−x P;Journal of Nanoparticle Research;2011-04-11
2. Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001);Applied Physics Letters;2010-08-23
3. Reconfirmation of the band offsets of InGaP/GaAs quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2010-06
4. Nonpolar-Oriented GaN Films for Polarization-Sensitive and Narrow-Band Photodetectors;MRS Bulletin;2009-05
5. Determination of the valence band offset of MOVPE-grownIn0.48Ga0.52P∕GaAsmultiple quantum wells by admittance spectroscopy;Physical Review B;2008-03-14
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