Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses-Reference-Cited by-同舟云学术

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Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses

Published:2005-02 Issue:1-4 Volume:26 Page:207-211
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Yoon J.J.,Jung S.I.,Park H.J.,Suh H.K.,Jeon M.H.,Leem J.Y.,Cho E.T.,Lee J.I.,Cho H.K.,Mo Y.G.,Kim J.S.,Son J.S.,Han I.K.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Carrier dynamics of self-assembled InAs quantum dots on InP (311)B substrates

2. Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)

3. Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots

4. Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6As self-organized quantum dots

5. InAs self‐assembled quantum dots on InP by molecular beam epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Excited-state Transitions of Self-assembled InAs/InAlGaAs Quantum Dots;Journal of the Korean Physical Society;2011-12-15

2. Temperature dependence of the photoluminescence spectra from InAs(P)/InP multilayers containing thick quantum dots: Dot-size-dependent carrier dynamics;Physical Review B;2011-06-06

3. Optical stability of shape-engineered InAs/InAlGaAs quantum dots;Journal of Applied Physics;2009-03

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