Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6As self-organized quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126356
Reference13 articles.
1. Effect of spectral broadening and electron‐hole scattering on carrier relaxation in GaAs quantum dots
2. Rapid carrier relaxation in self-assembledInxGa1−xAs/GaAs quantum dots
3. Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: Quantum efficiency and nonlinear gain
4. Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots
5. In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties
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