Effect of spectral broadening and electron‐hole scattering on carrier relaxation in GaAs quantum dots-Reference-Cited by-同舟云学术

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Effect of spectral broadening and electron‐hole scattering on carrier relaxation in GaAs quantum dots

Published:1994-01-10 Issue:2 Volume:64 Page:232-234
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vurgaftman Igor,Singh Jasprit

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.111513

Reference9 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Theory of the linear and nonlinear optical properties of semiconductor microcrystallites

3. Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases

4. Intrinsic mechanism for the poor luminescence properties of quantum-box systems

5. Radiative recombination in GaAs‐AlxGa1−xAs quantum dots

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