Carrier dynamics of self-assembled InAs quantum dots on InP (311)B substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125378
Reference18 articles.
1. Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
2. 1.3 μm room-temperature GaAs-based quantum-dot laser
3. Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers
4. Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers
5. New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
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1. Carrier relaxation dynamics in InAs/GaInAsP/InP(001) quantum dashes emitting near 1.55 μm;Applied Physics Letters;2013-08-19
2. Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers;SPIE Proceedings;2013-03-29
3. Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates;Journal of Applied Physics;2013-01-21
4. 41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band;Journal of Applied Physics;2012-01-15
5. 10-GHz 1.59-μm quantum dash passively mode-locked two-section lasers;SPIE Proceedings;2010-04-30
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