41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band-Reference-Cited by-同舟云学术

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41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band

Published:2012-01-15 Issue:2 Volume:111 Page:023102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dontabactouny M.,Piron R.,Klaime K.,Chevalier N.,Tavernier K.,Loualiche S.,Le Corre A.,Larsson D.,Rosenberg C.,Semenova E.,Yvind K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3677976

Reference22 articles.

1. InGaAs Quantum-Dot Mode-Locked Laser Diodes

2. Broad Repetition-Rate Tunable Quantum-Dot External-Cavity Passively Mode-Locked Laser with Extremely Narrow Radio Frequency Linewidth

3. High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser

4. RF Linewidth in Monolithic Passively Mode-Locked Semiconductor Laser

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal transfer and interaction mechanisms of localized excitons in families of InAs quantum dashes grown on InP(001) vicinal substrate emitting near 1.55 μm wavelength;International Journal of Modern Physics B;2016-08-18

2. Optical investigation of InAs quantum dashes grown on InP(001) vicinal substrate;Superlattices and Microstructures;2014-01

3. Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μm;Applied Physics Letters;2013-12-16

4. 23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers;Optics Express;2013-11-15

5. Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers;SPIE Proceedings;2013-03-29

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