23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers-Reference-Cited by-同舟云学术

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23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers

Published:2013-11-15 Issue:23 Volume:21 Page:29000
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Klaime K.,Calò C.,Piron R.,Paranthoen C.,Thiam D.,Batte T.,Dehaese O.,Le Pouliquen J.,Loualiche S.,Le Corre A.,Merghem K.,Martinez A.,Ramdane A.

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference16 articles.

1. Recovery of 160 GHz optical clock from 160 Gbit∕s data stream using modelocked laser diode

2. Mode-locked quantum-dot lasers

3. Few-Cycle Pulses Directly from a Laser

4. High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser

5. Epitaxial growth of 1.55μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gain-switched short pulse generation from InAs-InP (1 1 3)B quantum dot laser excited state;Optics & Laser Technology;2022-04

2. RIN of Gain-Switched Quantum Dot Laser;2021 IEEE Photonics Conference (IPC);2021-10

3. Femtosecond pulse generation from external cavity diode laser based on self-mode-locking;Optics Letters;2021-01-11

4. 20 GHz Mode-Locked Laser Diodes With Integrated Optical Feedback Cavities in a Generic Monolithic InP Photonics Platform;IEEE Photonics Journal;2017-10

5. From Basic Physical Properties of InAs/InP Quantum Dots to State-of-the-Art Lasers for 1.55 µm Optical Communications;Semiconductor Nanocrystals and Metal Nanoparticles;2016-08-17

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