Anisotropy of the electron energy levels in InxGa1−xAs/GaAs quantum dots with non uniform composition-Reference-Cited by-同舟云学术

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Anisotropy of the electron energy levels in InxGa1−xAs/GaAs quantum dots with non uniform composition

Published:2005-02 Issue:1-4 Volume:26 Page:436-440
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Migliorato M.A.,Powell D.,Zibik E.A.,Wilson L.R.,Fearn M.,Jefferson J.H.,Steer M.J.,Hopkinson M.,Cullis A.G.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Atomistic simulation of strain relaxation inInxGa1−xAs/GaAsquantum dots with nonuniform composition

2. Molecular Dynamics Simulations of Single-wall GaN Nanotubes

3. Nonuniform alloying in Ge(Si)/Si(001) quantum dots

4. Nature of the Stranski-Krastanow Transition during Epitaxy of InGaAs on GaAs

5. Nonuniform Composition Profile inIn0.5Ga0.5AsAlloy Quantum Dots

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1. 3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs;Scripta Materialia;2015-07

2. Elastic and vibrational properties of group IV semiconductors in empirical potential modelling;Journal of Physics: Condensed Matter;2013-09-24

3. Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductors;Journal of Applied Physics;2013-08-21

4. The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties;Nanotechnology;2012-04-02

5. Compositional mapping of semiconductor quantum dots and rings;Physics Reports;2011-04

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