The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties-Reference-Cited by-同舟云学术

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The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

Published:2012-04-02 Issue:16 Volume:23 Page:165202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Usman Muhammad,Tasco Vittorianna,Todaro Maria Teresa,De Giorgi Milena,O’Reilly Eoin P,Klimeck Gerhard,Passaseo Adriana

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=16/a=165202/pdf

Reference43 articles.

1. Enhanced Performances of Quantum Dot Lasers Operating at 1.3 $\mu$ m

2. Quantum-Dot Semiconductor Optical Amplifiers

3. Ultrabright source of entangled photon pairs

4. Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

5. Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling Electronic and Optical Properties of InAs/InP Quantum Dots;Photonics;2024-08-10

2. Impact of Excited States Transitions on Polarization Property of InAs/InP Quantum Dots;IEEE Journal of Quantum Electronics;2022-02

3. Emission directionality of electronic intraband transitions in stacked quantum dots;Physical Review B;2021-09-29

4. Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study;Physical Review B;2021-03-03

5. Tuning the Emission Directionality of Stacked Quantum Dots;ACS Photonics;2018-11-02

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