Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3587167
Reference37 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range
3. Complete ground state gain recovery after ultrashort double pulses in quantum dot based semiconductor optical amplifier
4. Dispersionless saturable absorber mirrors with large modulation depths and low saturation fluences
5. Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots
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