Atomistic simulation of strain relaxation inInxGa1−xAs/GaAsquantum dots with nonuniform composition
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.115316/fulltext
Reference17 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Self-organized growth of quantum-dot structures
3. Nonuniform Composition Profile inIn0.5Ga0.5AsAlloy Quantum Dots
4. Nature of the Stranski-Krastanow Transition during Epitaxy of InGaAs on GaAs
5. Nanometer-Scale Resolution of Strain and Interdiffusion in Self-AssembledInAs/GaAsQuantum Dots
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