Interfaces of semiconductor heterojunctions studied using an FEL-Reference-Cited by-同舟云学术

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Interfaces of semiconductor heterojunctions studied using an FEL

Published:1998-09 Issue:1-4 Volume:144 Page:107-114
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Nishi K,Morota N,Murase Y,Nakashima H

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference36 articles.

1. F. Capasso, G. Margartondo, Heterojunction Band Discontinuities Physics and Device Applications, North-Holland, Amsterdam, 1987

2. C. Coluzza et al., Phys. Rev. B 46 (1992) 12834

3. J.T. McKinley et al., Nucl. Instr. and Meth. A 341 (1994) 156

4. The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures

5. Photoemission of Electrons from Silicon into Silicon Dioxide

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3. A unique photoemission method to measure semiconductor heterojunction band offsets;Applied Physics Letters;2013-01-07

4. References;Internal Photoemission Spectroscopy;2008

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