A unique photoemission method to measure semiconductor heterojunction band offsets-Reference-Cited by-同舟云学术

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A unique photoemission method to measure semiconductor heterojunction band offsets

Published:2013-01-07 Issue:1 Volume:102 Page:012101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Q.,Li R.,Yan R.,Kosel T.,Xing H. G.,Seabaugh A. C.,Xu K.,Kirillov O. A.,Gundlach D. J.,Richter C. A.,Nguyen N. V.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4772979

Reference24 articles.

1. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

4. Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

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