Interface measurements of heterojunction band lineups with the Vanderbilt free-electron laser-Reference-Cited by-同舟云学术

Interface measurements of heterojunction band lineups with the Vanderbilt free-electron laser

Published:1992-11-15 Issue:19 Volume:46 Page:12834-12836
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Coluzza C.,Tuncel E.,Staehli J.-L.,Baudat P. A.,Margaritondo G.,McKinley J. T.,Ueda A.,Barnes A. V.,Albridge R. G.,Tolk N. H.,Martin D.,Morier-Genoud F.,Dupuy C.,Rudra A.,Ilegems M.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.12834/fulltext

Reference27 articles.

1. Understanding and controlling semiconductor interfaces: spectroscopy and spectromicroscopy

2. Intrinsic and extrinsic charge neutrality levels in semiconductors: an Empirical approach

3. The metal-semiconductor interface: Si (111) and zincblende (110) junctions

4. Semiconductor interface formation: The role of the induced density of interface states

5. Semiconductor interface formation: theoretical aspects

Cited by 56 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Most Reliable and Precise Model to Determine Schottky Barrier Height and Photoelectron Yield Spectroscopy;Optical and Quantum Electronics;2019-11

2. Heterojunction and superlattice detectors for infrared to ultraviolet;Progress in Quantum Electronics;2016-07

3. Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy;Journal of Electronic Materials;2016-06-22

4. Electrical Measurements of Surfaces and Interfaces;An Essential Guide to Electronic Material Surfaces and Interfaces;2016-05-20

5. Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit;Advances in OptoElectronics;2016-01-28