Damage in silicon carbide induced by Rutherford backscattering analysis
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference23 articles.
1. W.J. Choyke, H. Matsunami, G. Pensl (Ed.), Silicon carbide: A review of fundamental questions and applications to current device technology, Akademie Verlag, Berlin, 1997
2. Amorphization and recrystallization of 6H‐SiC by ion‐beam irradiation
3. The irradiation-induced crystalline-to-amorphous phase transition in α-SiC
4. He+ beam induced damage of silicon carbide studied by vibrational spectroscopy
5. Amorphization and defect recombination in ion implanted silicon carbide
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1. A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy;Journal of Applied Physics;2006-11
2. Ion implantation-induced damage depth profile determination in SiC by means of RBS/C and bevelling technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-09
3. Damage induced in high energy helium-implanted 4H-SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
4. Swelling of SiC under helium implantation;Journal of Applied Physics;2005-12
5. Deep-level defects in n-type 6H silicon carbide induced by He implantation;Journal of Applied Physics;2005-08-15
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