Damage induced in high energy helium-implanted 4H-SiC
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Experimental simulation of the effect of transmuted helium on the mechanical properties of silicon carbide
2. Ion implantation effects in silicon carbide
3. Ion beam modification of 6H/15R SiC crystals
4. Amorphization and defect recombination in ion implanted silicon carbide
5. Amorphization of SiC under ion and neutron irradiation
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC;Journal of Applied Physics;2024-05-08
2. Morphological and microstructural evolutions of chemical vapor reaction-fabricated SiC under argon ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-08
3. Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering;Journal of Materials Science;2022-11
4. Effects of helium irradiation on fine grained β-SiC synthesized by spark plasma sintering;Journal of the European Ceramic Society;2020-01
5. Strain engineering 4H-SiC with ion beams;Applied Physics Letters;2019-06-03
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