Lattice location of implanted Ag in Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Characterization of silver‐related deep levels in silicon
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1. Study of thermal recrystallisation in Si implanted by 0.4‐MeV heavy ions;Surface and Interface Analysis;2019-09-02
2. The Effect of Pulsed Laser Radiation on a Si Layer with a High Dose of Implanted Ag+ Ions;Optics and Spectroscopy;2018-10
3. Electrical Properties of Metals in Si and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
4. Pulsed laser annealing of high-dose Ag+-ion implanted Si layer;Journal of Physics D: Applied Physics;2017-12-07
5. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals;Journal of Applied Physics;2014-08-21
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