Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893362
Reference111 articles.
1. Si versus Ge for future microelectronics
2. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
3. Challenges and opportunities in advanced Ge pMOSFETs
4. Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)
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