Effects of annealing and α irradiation on deep levels in silver‐dopedn‐type silicon-Reference-Cited by-同舟云学术

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Effects of annealing and α irradiation on deep levels in silver‐dopedn‐type silicon

Published:1995-04 Issue:7 Volume:77 Page:3315-3322
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ali Akbar,Iqbal M. Zafar,Baber N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.358617

Reference23 articles.

1. Transition metals in silicon

2. Transition Metal Excited States in Silicon

3. Determination of deep energy levels in Si by MOS techniques

4. Thermal ionization rates and energies of electrons and holes at silver centers in silicon

5. Thermal emission rates and activation energies of electrons and holes at silver centers in silicon

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ag and Ag–Cu interactions in Si;Journal of Applied Physics;2020-10-21

2. Effect of β-irradiation on photoluminescence of MOCVD grown GaN;Journal of Materials Science: Materials in Electronics;2008-03-11

3. Interaction of alpha radiation with thermally-induced defects in silicon;Materials Characterization;2008-01

4. Effect of temperature on thermally induced defects in silicon;Journal of Materials Science: Materials in Electronics;2007-04-10

5. Lattice location of implanted Ag in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05

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