Thermal emission rates and activation energies of electrons and holes at silver centers in silicon-Reference-Cited by-同舟云学术

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Thermal emission rates and activation energies of electrons and holes at silver centers in silicon

Published:1972-10-16 Issue:2 Volume:13 Page:457-464
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Yau L. D.,Smiley C. F.,Sah C. T.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Notizen: Tiefe Energieniveaus in Silicium

2. Electronic Properties of Silicon Doped with Silver

3. Thermal ionization rates and energies of electrons and holes at silver centers in silicon

4. LOW‐TEMPERATURE HIGH‐FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP‐AND SHALLOW‐LEVEL IMPURITY CENTER CONCENTRATIONS

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1. Silver‐ and Silver–Hydrogen‐Related Defects in Silicon;physica status solidi (a);2021-07-29

2. Ag and Ag–Cu interactions in Si;Journal of Applied Physics;2020-10-21

3. Effects of annealing and α irradiation on deep levels in silver‐dopedn‐type silicon;Journal of Applied Physics;1995-04

4. On the correlation of implantation defects and implanted species;Mikrochimica Acta;1992-05

5. Characterization of silver‐related deep levels in silicon;Journal of Applied Physics;1987-10

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