Displacement damage degradation of ion-induced charge in Si pin photodiode-Reference-Cited by-同舟云学术

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Displacement damage degradation of ion-induced charge in Si pin photodiode

Published:2003-05 Issue: Volume:206 Page:444-447
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Onoda Shinobu,Hirao Toshio,Stuart Laird Jamie,Mori Hidenobu,Itoh Hisayoshi,Wakasa Takeshi,Okamoto Tsuyoshi,Koizumi Yoshiharu

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. Effects of ion damage on IBICC and SEU imaging

2. J.S. Laird, T. Hirao, S. Onoda, H. Mori, H. Itoh, AWAD (2002) Proceedings

3. Development of a new data collection system and chamber for microbeam and laser investigations of single event phenomena

4. Investigation of single-event charge collection from angled ion strikes

5. Structural changes in InP/Si solar cells following irradiation with protons to very high fluences

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1. High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-01

2. Heavy-Ion Soft Errors in Back-Biased Thin-BOX SOI SRAMs: Hundredfold Sensitivity Due to Line-Type Multicell Upsets;IEEE Transactions on Nuclear Science;2018-01

3. Performance analysis of PIN photodiode under gamma radiation effects through modeling;Journal of Optics;2015-11-06

4. Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices;Journal of Semiconductors;2015-11

5. Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes;Journal of Instrumentation;2013-09-10

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