Divacancies in proton irradiated silicon: Comparison of annealing mechanisms studied with infrared spectroscopy and positron annihilation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
2. 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy
3. Effect of Polarized Light on the 1.8-, 3.3-, and 3.9-μ Radiation-Induced Absorption Bands in Silicon
4. Intrinsic defects in neutron-irradiated silicon an infrared study
5. Infrared absorption studies of the divacancy in silicon: New properties of the singly negative charge state
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. PALS and FTIR study of proton irradiated Si upon ageing;INTERNATIONAL CONFERENCE ON SCIENCE AND APPLIED SCIENCE (ICSAS) 2019;2019
2. Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon;Journal of Electronic Materials;2018-05-14
3. Engineering the thermal conductivity along an individual silicon nanowire by selective helium ion irradiation;Nature Communications;2017-06-27
4. Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-10
5. Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3