Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons

Author:

Kozlovski V.V.,Lebedev A.A.,Emtsev V.V.,Oganesyan G.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference30 articles.

1. Semiconductor Power Devices: Physics, Characteristics, Reliability;Lutz,2011

2. A comparative study of the radiation hardness of silicon carbide using light ions

3. Radiation Effects in Advanced Semiconductor Materials and Devices;Claeys,2002

4. Model for conductivity compensation of moderately doped n- and p-4H-SiC by high-energy electron bombardment

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