Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference30 articles.
1. Semiconductor Power Devices: Physics, Characteristics, Reliability;Lutz,2011
2. A comparative study of the radiation hardness of silicon carbide using light ions
3. Radiation Effects in Advanced Semiconductor Materials and Devices;Claeys,2002
4. Model for conductivity compensation of moderately doped n- and p-4H-SiC by high-energy electron bombardment
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