Intrinsic defects in neutron-irradiated silicon an infrared study
Author:
Publisher
EDP Sciences
Subject
General Engineering
Link
http://jphyslet.journaldephysique.org/10.1051/jphyslet:01978003908011300/pdf
Reference18 articles.
1. Infrared Absorption and Photoconductivity in Irradiated Silicon
2. 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy
3. Infrared Spectroscopy of Divacancy-Associated Radiation-Induced Absorption Bands in Silicon
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1. Absorption of Deep Centres and Bound Excitons;Springer Series in Solid-State Sciences;2011-10-27
2. Divacancies in proton irradiated silicon: Comparison of annealing mechanisms studied with infrared spectroscopy and positron annihilation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05
3. Optical studies of metastable properties of a defect with a zero-phonon transition at 0.615 eV in 2-MeV electron-irradiated Czochralski-grown silicon;Physical Review B;1989-07-15
4. Infrared absorption studies of the divacancy in silicon: New properties of the singly negative charge state;Physical Review B;1988-08-15
5. Photoexcitation properties of infrared active defects induced by neutron irradiation in silicon;Journal of Nuclear Materials;1982-07
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