Characterization of extended defects in SiGe alloys formed by high dose Ge+ implantation into Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. UHVCVD growth of Si/SiGe heterostructures and their applications
2. Strain relief in compositionally graded Si1-xGex formed by high dose Ion implantation
3. Characterization of SiGe/Si heterostructures formed by Ge+and C+implantation
4. Reduction of secondary defect density by C and B implants in GexSi1−xlayers formed by high dose Ge implantation in (100) Si
5. Control of defects in C+, Ge+, and Er+ implanted Si using post amorphization and solid phase regrowth
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization;Solid-State Electronics;2013-05
2. Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
3. Relaxation of strain during solid phase epitaxial growth of Ge+ ion implanted layers in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-09
4. Evolution of mechanical strain and extended defects in annealed (100) silicon samples implanted with Ge+ ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-04
5. Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling;Journal of Applied Physics;1998-04
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