Control of defects in C+, Ge+, and Er+ implanted Si using post amorphization and solid phase regrowth
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. A systematic analysis of defects in ion-implanted silicon
2. Regrowth behaviour of Si1−xGex/Si structures formed by Ge+ ion implantation and post amorphisation
3. Proc. 6th Int. Conf. on Ion Implantation Technology;Felch,1987
4. Reduction of secondary defect formation in MeV B+ion‐implanted Si (100)
5. Reduction of secondary defect formation in MeV As ion implanted Si(100)
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1. Defect mitigation by ion induced amorphousization and solid-phase epitaxy;AIP Conference Proceedings;2013
2. Defect formation and annealing behavior of Si implanted by high-energy 166Er ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-03
3. 2.0-MeV Er+ implanted in silicon: depth distribution, damage profile and annealing behaviour;Applied Physics A Materials Science & Processing;2000-12
4. Radiation damage and annealing behavior of 2.0 MeV 160Er+ implanted silicon;Materials Science and Engineering: B;2000-08
5. Implanted dopant and associated damage profile in MeV 166Er+ implanted silicon;Physics Letters A;2000-01
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