Evolution of mechanical strain and extended defects in annealed (100) silicon samples implanted with Ge+ ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. SiGe/Si camel-barrier heterojunction internal photoemission LWIR detector
2. A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices
3. Improved crystalline quality of Si1−xGexformed by low‐temperature germanium ion implantation
4. Solid‐phase epitaxial growth of Ge‐Si alloys made by ion implantation
5. Reduction of secondary defect density by C and B implants in GexSi1−xlayers formed by high dose Ge implantation in (100) Si
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1. Germanium-silicon alloy and core–shell nanocrystals by gas phase synthesis;Nanoscale;2015
2. Self-assembled SiGe nanoparticles integrated into SOI;Materials Letters;2012-04
3. Evolution of SiGe nanoclusters and micro defects in the Si1−xGex layer fabricated by two-step ion implantation and subsequent thermal annealing;Applied Surface Science;2011-09
4. Stress Adjustment and Bonding of H-Implanted 2 in. Freestanding GaN Wafer: The Concept of Double-Sided Splitting;Electrochemical and Solid-State Letters;2009
5. Enhancement in wafer bow of free-standing GaN substrates due to high-dose hydrogen implantation: implications for GaN layer transfer applications;Semiconductor Science and Technology;2007-03-19
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