Ion beam induced epitaxial crystallization of SrTiO3-Reference-Cited by-同舟云学术

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Ion beam induced epitaxial crystallization of SrTiO3

Published:1997-01 Issue:1-4 Volume:121 Page:184-186
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Oyoshi K.,Hishita S.,Suehara S.,Aizawa T.,Haneda H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Ion-beam-induced epitaxial crystallization and amorphization in silicon

2. In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As+Ion Implantation

3. Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon

4. Ion-beam-induced crystallization and amorphization of silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Implantation;Kirk-Othmer Encyclopedia of Chemical Technology;2005-03-18

2. Recrystallization of ion-beam amorphized BSCC thin films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05

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