Metallization of ion beam synthesized Si/3C–SiC/Si layer systems by high-dose implantation of transition metal ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
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2. keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon
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1. Research on surface modification and infrared emissivity of In2O3: W thin films;Thin Solid Films;2014-11
2. Formation of SiC Thin Films by Ion Beam Synthesis;Silicon Carbide;2004
3. High-dose carbon implantations into silicon: fundamental studies for new technological tricks;Applied Physics A: Materials Science & Processing;2003-06-01
4. XTEM characterization of tungsten implanted SiC thin films on silicon for field emission devices;Thin Solid Films;2003-03
5. Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C–SiC layers in silicon;Applied Surface Science;2001-12
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