keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon-Reference-Cited by-同舟云学术

keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

Published:1994 Issue: Volume:354 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Lindner J.K.N.,Frohnwieser A.,Rauschenbach B.,Stritzker B.

Abstract

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference14 articles.

1. Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature

2. Production of β-SiC buffer layers for CVD diamond thin films by ion implantation

3. Mechanism of buried β-SiC formation by implanted carbon in silicon

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