Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C–SiC layers in silicon-Reference-Cited by-同舟云学术

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Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C–SiC layers in silicon

Published:2001-12 Issue:1-4 Volume:184 Page:299-306
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lindner J.K.N.,Wenzel S.,Stritzker B.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

2. SiC buried layer formation by ion beam synthesis at 950 °C

3. Synthesis of Thin Membranes in Si Technology by Carbon Ion Implantation

4. Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis

5. Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a metal vapor vacuum arc ion source

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of SiC Thin Films by Ion Beam Synthesis;Silicon Carbide;2004

2. High-dose carbon implantations into silicon: fundamental studies for new technological tricks;Applied Physics A: Materials Science & Processing;2003-06-01

3. XTEM characterization of tungsten implanted SiC thin films on silicon for field emission devices;Thin Solid Films;2003-03

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