Cathodoluminescence of strained quantum wells and layers
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference34 articles.
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Retraction: “Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates” [Appl. Phys. Lett. 58, 2090 (1991)];Applied Physics Letters;2023-06-19
2. Local probe techniques for luminescence studies of low-dimensional semiconductor structures;Journal of Applied Physics;1998-08-15
3. Radiative recombination in pseudomorphic InGaAs/GaAs quantum wires grown on nonplanar substrates;Solid-State Electronics;1994-04
4. Electron Microscopy and X‐Ray Diffraction Determinations of Strain Release in InGaAs / GaAs Superlattices Grown by Molecular Beam Epitaxy;Journal of The Electrochemical Society;1993-08-01
5. Crystallographic and optical properties of InP/Si(001) grown by low temperature MOCVD process;Surface Science;1992-01
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