Theory of reduced threshold current density in GaAs/AlGaAs quantum well lasers
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
2. Near‐ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasers
3. Polarization‐dependent gain‐current relationship in (111)‐oriented GaAs/AlGaAs quantum‐well lasers
4. Valence subband structure and optical gain of GaAs-AlGaAs (111) quantum wells
5. Motion of Electrons and Holes in Perturbed Periodic Fields
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2. Strained Layer Quantum Well Lasers;Semiconductor Lasers I;1999
3. Quantum Well Semiconductor Lasers;Semiconductor Lasers I;1999
4. Carbon incorporation in GaAs/Al0.2Ga0.8As triple quantum wells and its effect on laser performance;Superlattices and Microstructures;1998-08
5. Influence of substrate misorientation on quality of active region and performance of triple-quantum-well lasers grown by molecular beam epitaxy;Journal of Crystal Growth;1997-10
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