Polarization‐dependent gain‐current relationship in (111)‐oriented GaAs/AlGaAs quantum‐well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341426
Reference26 articles.
1. Calculated threshold current of GaAs quantum well lasers
2. Comment on Polarization Dependent Momentum Matrix Elements in Quantum Well Lasers
3. Polarization‐dependent gain in GaAs/AlGaAs multi‐quantum‐well lasers: Theory and experiment
4. Evidence of no k-selection in gain spectra of quantum well AlGaAs laser diodes
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1. Crystallographic input data for (001)-, (110)- and (111)-oriented superlattices;Acta Crystallographica Section B Structural Science;2012-07-17
2. First principles calculation of the opto-electronic properties of (110) growth axis SiGe superlattices;Superlattices and Microstructures;2007-01
3. Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning;IEEE Journal of Quantum Electronics;2004-05
4. Band Engineering of the Polarization and Gain Properties in VCSELs;Springer Series in Photonics;2003
5. Strained Layer Quantum Well Lasers;Semiconductor Lasers I;1999
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