Influence of substrate misorientation on quality of active region and performance of triple-quantum-well lasers grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Effects of substrate misorientation on the properties of (Al, Ga)As grown by molecular beam epitaxy
2. Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular‐beam epitaxy
3. Effects of substrate misorientation on incorporation of ambient oxygen and interfacial roughness in AlGaAs/GaAs heterostructures grown by molecular‐beam epitaxy
4. Residual oxygen levels in AlGaAs/GaAs quantum‐well laser structures: Effects of Si and Be doping and substrate misorientation
5. Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy
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1. The nonlinear optical properties of GaAs/GaAlAs triple quantum well: Role of the electromagnetic fields and structural parameters;Physica B: Condensed Matter;2022-12
2. Electrical Properties of InSbN Alloys Fabricated by Two-Step Ion Implantation;Advanced Materials Research;2012-09
3. Sub-meV photoluminescence linewidth and >106cm2∕Vs electron mobility in AlGaAs∕GaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates;Journal of Applied Physics;2006-05
4. Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces;Journal of Crystal Growth;2001-07
5. Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell;Journal of Crystal Growth;2000-04
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