Photoconductivity in silicon doped AlAs/GaAs short period superlattices
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Theory of theDXcenter inAlxGa1−xAs and GaAs crystals
3. Effect of local alloy disorder on emission kinetics of deep donors (DXcenters) in AlxGa1−xAs of low Al content
4. Effects of the local environment on the properties ofDXcenters in Si‐doped GaAs and dilute AlxGa1−xAs alloys
5. Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System -- a Novel Short Period AlAs/n-GaAs Superlattice --
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Specific features of 2D electron distribution over the subbands of the quantum well of a single heavily doped heterojunction;Semiconductors;2006-12
2. Negative magnetoresistance and electron localization in GaAs-AlAs superlattices;Semiconductor Science and Technology;1999-01-01
3. DX states in GaAs/AlAs short-period superlattices doped selectively with silicon;Semiconductor Science and Technology;1993-11-01
4. Carbon acceptor luminescence in type-I GaAs/AlAs ultrathin-layer superlattices;Applied Physics A Solids and Surfaces;1992-03
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