Effects of the local environment on the properties ofDXcenters in Si‐doped GaAs and dilute AlxGa1−xAs alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102630
Reference11 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
3. Electron Localization by a Metastable Donor Level inn−GaAs: A New Mechanism Limiting the Free-Carrier Density
4. Effect of local alloy disorder on emission kinetics of deep donors (DXcenters) in AlxGa1−xAs of low Al content
5. Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys
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