Surface migration study of atoms and formation of truly-smooth top and bottom heterointerfaces in GaAsAlAs quantum wells by temperature-switched technique in molecular beam epitaxy-Reference-Cited by-同舟云学术

Surface migration study of atoms and formation of truly-smooth top and bottom heterointerfaces in GaAsAlAs quantum wells by temperature-switched technique in molecular beam epitaxy

Published:1988-01 Issue:2 Volume:4 Page:237-241
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Tanaka Masaaki,Sakaki Hiroyuki

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy

2. Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption

3. Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE

4. Dynamic RHEED observations of the MBE growth of GaAs

5. Layer‐by‐layer sublimation observed by reflection high‐energy electron diffraction intensity oscillation in a molecular beam epitaxy system

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