Improvement of Carrier Mobility in Quantum Wells by the Surface Smoothing of Strain-Relaxed Buffer Layers-Reference-Cited by-同舟云学术

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Improvement of Carrier Mobility in Quantum Wells by the Surface Smoothing of Strain-Relaxed Buffer Layers

Published:2024-05-03 Issue:10 Volume:24 Page:4094-4100
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Aleksandrova Anna¹²^ORCID,Golz Christian¹²,Zhuchenko Zoriana¹³,Biermann Klaus⁴,Trampert Achim⁴^ORCID,Hanke Michael⁴,Weidlich Helmut²,Masselink William Ted¹,Takagaki Yukihiko⁴^ORCID

Affiliation:

1. Department of Physics, Humboldt University Berlin, Newton Str. 15, 12489 Berlin, Germany

2. Institute Kurz GmbH, Stöckheimer Weg 1, 50829 Cologne, Germany

3. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauki 45, 03028 Kyiv, Ukraine

4. Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin, Germany

Funder

Deutscher Akademischer Austauschdienst

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00043

Reference38 articles.

1. Defects in epitaxial multilayers I. Misfit dislocations

2. Transistor performance and electron transport properties of high performance InAs quantum-well FET's

3. Review on spintronics: Principles and device applications

4. Control of Spin Precession in a Spin-Injected Field Effect Transistor

5. Spin-relaxation mechanisms in InAs quantum well heterostructures

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