Relationship between gas flows and film composition in organometallic vapor phase epitaxy of In1−xGaxAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. The role of MOVPE in the manufacture of high performance InP based optoelectronic devices
2. InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition
3. The characterisation of Ga1−xInxAs,Al1−xInxAs and InP epitaxial layers prepared by metal organic chemical vapour deposition
4. High quality epitaxial indium phosphide and indium alloys grown using trimethylindium and phosphine in an atmospheric pressure reactor
5. Effect of growth temperature on the optical, electrical and crystallographic properties of epitaxial indium gallium arsenide grown by MOCVD in an atmospheric pressure reactor
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy;Journal of Crystal Growth;1997-01
2. Self-consistent calculations of carrier distribution and energy bands in InGaAs/InP p-i-n diodes;Solid State Communications;1993-01
3. The effect of InP buffer layer on the electron transport properties of epitaxial In1−xGaxAs;Journal of Applied Physics;1991-05-15
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