InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Low dark-current, high-efficiency planar In0.53Ga0.47As/InP P-I-N photodiodes
2. Planar type vapor-phase epitaxial In0.53Ga0.47As photodiode
3. Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures
4. InGaAs photodiodes prepared by low-pressure MOCVD
5. presented at 43rd Device Research Conf.;Wang,1985
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