Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. An In0.53Ga0.47As junction field-effect transistor
2. High‐sensitivity Ga0.47In0.53As photoconductive detectors prepared by vapor phase epitaxy
3. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
4. Effect of Baking Temperature on Purity of LPE Ga0.47In0.53As
5. Proc. 10th Intern. Symp. on GaAs and Related Compounds;Cox,1983
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