Double crystal X-Ray diffraction studies on chloride-VPE grown GaxIn1 − xAs layers with different Ga-TO-In ratio
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Indium content measurement and influence on etch pit density of VPE grown InxGa1-xAs(x<0.03)/GaAs epilayers
2. The Growth of Epitaxial Layers of Ga0.47In0.53As by the Vapor‐Phase Epitaxy‐Hydride Method Using a Gallium‐Indium Alloy Source
3. Vapour phase hetero-epitaxy: Growth of GaInAs layers
4. Proc. of the Int. Conf. on GaAs and Related Compounds;Kordos,1981
5. Vapor phase epitaxial growth of high purity InGaAs, InP and InGaAs/InP multilayer structures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of relative positions between RF coil and crucible on sapphire crystals by edge-defined film-fed growth (EFG) technique;Journal of Central South University;2015-10
2. Effective Techniques for Reduction of Silicon Impurity in Chloride Vapor Phase Epitaxial Growth of GaInAs;Materials Research Bulletin;1998-02
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