SiGe quantum wells on (110) Si grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Luminescence from Strained Si1-xGex/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
2. Growth and band gap of strained 〈110〉 Si1−xGexlayers on silicon substrates by chemical vapor deposition
3. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
4. Band gap luminescence in pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and characterization of strained Si1−xGex multi-quantum-well waveguide photodetectors on (110) Si for 1.3 and 1.55μm;Physica E: Low-dimensional Systems and Nanostructures;1998-07
2. Lateral confinement by low pressure chemical vapor deposition-based selective epitaxial growth of Si1−xGex/Si nanostructures;Journal of Applied Physics;1997-05-15
3. Growth of self-assembled homogeneous SiGe-dots on Si(100);Thin Solid Films;1997-02
4. Strained SiGe/Si quantum well dots and wires selectively grown by LPCVD and their optical properties;Thin Solid Films;1997-02
5. Self-organized MBE growth of Ge-rich SiGe dots on Si(100);Selected Topics in Group IV and II–VI Semiconductors;1996
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