Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Published:1995-05 Issue: Volume:150 Page:964-968
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhang Xiang-jiu,Lu Hong-qiang,Gong Da-wai,Lu Xue-kun,Chen Xiang-jun,Hu Ji-huang,Huang Wei-ning,Fan Yong-liang,Wang Xun

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

2. ELIMINATION OF INTERFACIAL BORON SPIKES IN Si MOLECULAR BEAM EPITAXY BY HYDROGEN PASSIVATION TREATMENT OF Si (100) SUBSTRATE

3. Oxygen removal from Si via reaction with adsorbed Ge

4. Thin epitaxial Ge−Si(111) films: Study and control of morphology

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependent biaxial texture evolution in Ge films under oblique angle vapor deposition;Thin Solid Films;2011-06

2. Fluorine-free high-resolution selective plasma etching of silicon-oxide layers on silicon substrates;Journal of Physics D: Applied Physics;2010-09-14

3. Probing Interactions of Ge with Chemical and Thermal SiO2 to Understand Selective Growth of Ge on Si during Molecular Beam Epitaxy;The Journal of Physical Chemistry C;2006-12-07

4. Heteroepitaxy of high-quality Ge on Si by nanoscale seed pads grown through a SiO 2 interlayer;SPIE Proceedings;2005-04-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3