Author:
WEI XING ,GONG DA-WEI ,YANG XIAO-PING ,LU HONG-QIANG ,CUI QIAN ,SHENG CHI ,ZHANG XIANG-JIU ,WANG XUN ,WANG QIN-HUA ,LU FANG ,SUN HENG-HUI ,
Abstract
A stable hydrogen-terminated Si (100) surface was obtained by using a modified mothed. The Si (100) surface was hydrogen passivated during the ex-situ HF-dip followed by the in-situ low-temperature desorption of physisorbed residues. It was found that this procedure is very effective to eliminate the boron spike at the Si MBE layer/p-Si substrate interface. The origon of the boron spike is also discussed.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
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