Oxygen removal from Si via reaction with adsorbed Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98174
Reference11 articles.
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4. UV ozone cleaning of silicon substrates in silicon molecular beam epitaxy
5. Cleaning of Si and GaAs Crystal Surfaces by Ion Bombardment in the 50–1500 eV Range: Influence of Bombarding Energy and Sample Temperature on Damage and Incorporation
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1. Coatings consisting of Ge particles on nonwettable Si oxide surfaces and their resonance reflection spectra;Thin Solid Films;2023-03
2. Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior;Thin Solid Films;2020-01
3. Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-07
4. Heteroepitaxy of Ge on Si(001) with pits and windows transferred from free-standing porous alumina mask;Nanotechnology;2013-04-11
5. Temperature dependent biaxial texture evolution in Ge films under oblique angle vapor deposition;Thin Solid Films;2011-06
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