Probing Interactions of Ge with Chemical and Thermal SiO2 to Understand Selective Growth of Ge on Si during Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Probing Interactions of Ge with Chemical and Thermal SiO2 to Understand Selective Growth of Ge on Si during Molecular Beam Epitaxy

Published:2006-12-07 Issue:2 Volume:111 Page:779-786
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Li Qiming¹,Krauss Joshua L.¹,Hersee Stephen¹,Han Sang M.¹

Affiliation:

1. Chemical and Nuclear Engineering Department, University of New Mexico, Albuquerque, New Mexico 87131, Materials Science and Engineering Department, University of Wisconsin, Madison, Wisconsin 53706, and Center for High Technology Materials, Electrical Engineering and Computer Engineering Department, University of New Mexico, Albuquerque, New Mexico 87131

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp062966o

Reference61 articles.

1. Selective epitaxial growth of silicon carbide on SiO2 masked Si(100): The effects of temperature

2. Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates

3. Selective epitaxial growth of GaAs by low-pressure MOVPE

4. Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy

5. Selective growth of Ge on Si(100) through vias of SiO2 nanotemplate using solid source molecular beam epitaxy

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